Advance Technical Information IXTK 120N25High Current..
MegaMOSTMFET
N-Channel Enhancement Mode
VDSSID25
RDS(on)
=250 V=120 A=22mΩ
SymbolVDSSVDGRVGSVGSMID25ID(RMS)IDMIAREAREASdv/dtPDTJTJMTstgTLMdWeight
Test conditionsMaximum ratings
VVVVAAAAmJJV/nsW°C°C°C°CNm/lb.in.
g
Features
G
DS
TJ= 25°C to 150°C250
.
TJ= 25°C to 150°C; RGS = 1.0 MΩ250ContinuousTransient
TC= 25°C MOSFET chip capabilityExternal lead current limit
TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C
IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSSTJ≤ 150°C, RG = 2 ΩTC
= 25°C
±20±30120754809064305560
-55 ... +150150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 sMounting torqueTO-264
3000.7/610
TO-264 AA (IXTK)
D (TAB)
G=GateS=SourceD= DrainTab= Drain
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure•International standard package•Fast switching times
Applications
SymbolTest Conditions
(TJ = 25°C unless otherwise specified)VDSSVGS(th)IGSSIDSSRDS(on)
VGS= 0 V, ID = 1 mAVDS= VGS, ID = 250 µAVGS= ±20 V DC, VDS = 0VDS= VDSSVGS= 0 V
TJ = 25°CTJ = 125°C
Characteristic ValuesMin. Typ.Max.25020
40±200
VVnA
•
••
Motor controlsDC choppers
Switched-mode power supplies
Advantages
•••
50 µA3mA22mΩ
Easy to mount with one screw(isolated mounting screw hole)Space savingsHigh power density
VGS= 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2002 IXYS All rights reserved
98879A (02/02)
元器件交易网www.cecb2b.com
IXTK 120N25SymbolTest Conditions(TJ = 25°C unless otherwise specified)gfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCK0.15VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25RG = 1.5 Ω (External)VGS = 0 V, VDS = 25 V, f = 1 MHzVDS= 10 V; ID = 0.5 ID25, pulse testCharacteristic valuesMin.Typ. Max.65859400173055035381753540070155SpFpFpFnsnsnsnsnCnCnC0.22K/WK/WDim.AA1A2bb1b2cDEeJKLL1PQQ1RR1STMillimeterMin.Max.4.825.132.542.892.002.101.121.422.392.692.903.090.530.8325.9126.1619.8119.965.46 BSC0.000.250.000.2520.3220.832.292.593.173.666.076.278.388.693.814.321.782.296.046.301.571.83Min.InchesMax. TO-264 AA Outline.190.202.100.114.079.083.044.056.094.106.114.122.021.0331.0201.030.780.786.215 BSC.000.010.000.010.800.820.090.102.125.144.239.247.330.342.150.170.070.090.238.248.062.072Source-Drain DiodeSymbolISISMVSDtrrQrrTest ConditionsVGS = 0VRatings and Characteristics(TJ = 25°C unless otherwise specified)Min.Typ. Max.1204801.5AAVRepetitive; pulse width limited by TJMIF = IS, VGS = 0 V,Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %IF = 30A, -di/dt = 100 A/µs, VR = 100V3506nsµCIXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,850,072
4,881,1064,931,844
5,017,5085,034,796
5,049,9615,063,307
5,187,1175,237,481
5,486,7155,381,025
6,306,728B1
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