FJT44
NPN Epitaxial Silicon Transistor
•
tm
High Voltage Transistor
321
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T=25°C unless otherwise noted
a
Symbol
VCBOVCEOVEBOICPCTJTSTG
Parameter
Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentCollector Dissipation
Value
5004006300
Units
VVVmAW°C°C
(Ta = 25 oC)
2150- 55 ~ +150
Junction Temperature Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T=25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
2
Value
62.5
Units
°C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm
Electrical Characteristics* T = 25°C unless otherwise noted
a
Symbol
BVCBOBVCEOBVEBOICBOICESIEBOhFE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff CurrentCollector-Emitter Cutoff CurrentEmitter-Base Cutoff CurrentDC Current Gain
Test Conditions
IC = 100uA, IE = 0IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCB = 400V IE = 0VCE = 400V, VBE = 0VCE = 4V, IC = 0VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mAIC = 1mA, IB = 0.1mAIC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA IC = 10mA, IB = 1mAVCB = 20V, IE = 0, f = 1MHz
Min.
5004006
Typ.Max.Units
VVV
100500100
40504540
200
nAnAnA
VCE(sat)
Collector-Emitter Saturation Voltage
0.40.50.750.757
VVVVpF
VBE(sat)Cobo
Base-Emitter Saturation Voltage Output Capacitance
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation1www.fairchildsemi.com
FJT44 Rev. B
FJT44 NPN Epitaxial Silicon TransistorTypical Performance Characteristics 160 10VCE=10V140120hFE, DC CURRENT GAINVCC=150VIC/IB=10oTa=25CVBE(off)=4V10060t[us], TIME80 40200-20-40tftd1101001000100000.1110100IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Turn-On Switching Times 1001000 Cib[pF],Cob[pF], CAPACITANCEVCC=150VIC/IB=10Ta=25℃10Ta=25Cf=1MHzo100t[us], TIMECibts 110Cobtf0.111010010.11101001000IC[mA], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Turn-Off Switching TimesFigure 4. Capacitance 1.00.5 Ta=25C0.8VCE[V] COLLECTOR EMITTER VOLTAGEoIC=1mA0.4IC=10mAIC=50mATa=25coVBE(sat) @IC/IB=10[V], VOLTAGE0.6VBE(on) @VCE=10V0.3 0.40.20.2VCE(sat)@IC/IB=100.10.00.111010010000.010100100010000100000IC[mA], COLLECTOR CURRENTIC[mA], COLLECTOR CURRENTFigure 5. On VoltageFigure 6. Collector Saturation RegionFJT44 Rev. B
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1FJT44 NPN Epitaxial Silicon TransistorTypical Performance Characteristics 100hFE, SMALL SIGNAL CURRENT GAINVCE=10Vf=10MHzoTa=25C1010.10.11101001000IC[mA], COLLECTOR CURRENTFigure 1. High Frequency Current Gain FJT44 Rev. B
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FJT44 NPN Epitaxial Silicon TransistorMechanical DimensionsSOT-2230.08MAX3.00 ±0.10MAX1.801.75 ±0.203.50 ±0.20(0.60)0.65 ±0.20+0.040.06–0.022.30 TYP(0.95)4.60 ±0.250.70 ±0.10(0.95)0.25–0.05+0.10(0.60)10°~0°1.60 ±0.20(0.46)(0.89)6.50 ±0.207.00 ±0.30Dimensions in MillimetersFJT44 Rev. B
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FJT44 NPN Epitaxial Silicon TransistorTRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
PreliminaryFirst Production
No Identification NeededFull Production
ObsoleteNot In Production
This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Rev. I20
5
FJT44 Rev. B
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